N-Channel MOSFET Transistor
Description
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK600
DESCRIPTION ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
60 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 25 A
Total Dissipation@TC=25℃
75 W
Max.
Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
isc website：www.
iscsemi.
cn
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK600
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 15A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=50V; VGS= 0
VSD Diode Forward Voltage
IF=25A; VGS=0
tr Rise time
ton Turn-on time tf Fall time
VGS=10V;ID=3A; RL=50Ω
toff Turn-off time
MIN TYP MAX UNIT 60 V
2.
0 4.
0 V 0.
055 Ω ±100 nA
1 uA
1.
3 1.
7
V
50 75 ns
75 115 80 110 240 330
ns ns ns
isc website：www.
iscsemi.
cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.
fineprint.
cn
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