Silicon NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Switching Speed ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V...
Inchange Semiconductor
2SC3714 PDF File
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