EPITAXIAL PLANAR PNP TRANSISTOR
Description
J B
AA E
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES High Breakdown Voltage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC PC PC* Tj
-400 -400 -7 -100 500
1 150
Storage Temperature Range
Tstg -55 150
PC* : Mounted on Ceramic Substrate (250 2 0.
85)
UNIT V V V mA mW W
KTA1759
EPITAXIAL PLANAR PNP TRANSISTOR
A H
DD K
FF
123
C
G
DIM A B C D E F G H J K
MILLIMETERS 4.
70 MAX 2.
50 +_0.
20 1.
70 MAX
0.
45+0.
15/-0.
10 4.
25 MAX 1.
50+_ 0.
10 0.
40 TYP 1.
75 MAX 0.
75 MIN
0.
5+0.
10/-0.
05
1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
SOT-89
Marking
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut off Current Emitter Cutoff Current DC Current Gain * Collector-Emitter Saturation Voltage *
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat)2
Base-Emitter Saturation Voltage * VBE(sat) *Pulse Test : Pulse Width 300 S, Duty Cycle 2%
TEST CONDITION IC=-50 A, IE=0 IC=-1mA, IB=0 IE=-50 A, IC=0 VCB=-400V, IE=0 VEB=-6V, IC=0 VCE=-10V, IC=-10mA IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA
MIN.
-400 -400 -7.
0
50 -
TYP.
-
MAX.
-10 -10
300 -0.
5 -1.
5
UNIT V V V A A
V V
2008.
9.
23
Revision No : 0
1/2
DC CURRENT GAIN hFE
KTA1759
hFE - IC
100
30
10 -1
VCE =-10V -3 -10 -30 -100 -300 -1k
COLLECTOR CURRENT IC (mA)
100K 30K 10K 3K 1K 300 100 30 10 1
VCE(sat) - IC
IC /IB =10
3 10 30 100 300 1K
COLLECTOR CURRENT IC (mA)
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
SATURATION VOLTAGE VBE(sat) (mV)
VBE(sat) - IC
10K IC /IB =10
3K
1K 300
100 1
3 10 30 100 300 1K
COLLECTOR CURRENT IC (mA)
Cob - VCB
100 f=1MHz IE =0
30
10
3
1 0.
1 0.
3 1
3 10 30 100
COLLECTOR BASE VOLTAGE VCB (V)
SATURATION VOLTAGE VCE(sat) (mV)
2008.
9.
23
Revision No : 0
2/2
...
Similar Datasheet
