N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
Description
SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY / HIGH FREQUENCY AMPLIFIER APPLICATION
FEATURES Low Gain Controlled Amplifier High Transter Admittance
Maximum Ratings (Ta=25 ) CHARACTERISTIC
Gate-Drain Voltage Gate-Source Voltage Gate Current Drain Current Drain Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VGDO VGSO IG ID PD Tj Tstg
RATING -22 -22 10 50 150 150
-55~150
UNIT V V mA mA mW
A G H
D
KTK951S
N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
E L BL
23 1
PP
M 1.
SOURCE 2.
DRAIN 3.
GATE
DIM A B C D E G H J K L
M N P
MILLIMETERS 2.
93+_ 0.
20
1.
30+0.
20/-0.
15 1.
30 MAX
0.
45+0.
15/-0.
05
2.
40+0.
30/-0.
20 1.
90 0.
95
0.
13+0.
10/-0.
05
0.
00 ~ 0.
10 0.
55
0.
20 MIN 1.
00+0.
20/-0.
10
7
SOT-23
C N K J
Marking
IDSS Rank
Type Name
J
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
Gate-Source Breakdown Voltage Gate-Source Cut-off Voltage Gate Leakage Currnet Drain Current Forward Transfer Admittance
V(BR)GSS VGS(OFF)
IGSS IDSS(Note)
yfs
VDS=0V, IG=-10 VDS=5V, ID=10 VDS=0V, VGS=-15V VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz
Input Capacitance
Ciss VDS=5V, VGS=0V, f=1MHz
Note : IDSS Classification C : 12~22, D : 18~30, E : 27~40
2009.
5.
15
Revision No : 0
MIN TYP MAX UNIT
-22 -
-V
0 - -2.
5 V
- - 10 A
12 - 40 mA
20 30 - mS
- 9 - pF
1/3
DRAIN CURRENT ID (mA)
KTK951S
ID - VDS
20 VGS=0V
16 -0.
1V -0.
2V
12 -0.
3V -0.
4V
8 -0.
5V -0.
6V -0.
7V
4
0 0 2 4 6 8 10 12
DRAIN - SOURCE VOLTAGE VDS (V)
35 VDS=5V
30
25
20
15
10
5
0 -3 -2.
5
ID - VGS
IDSS=31mA IDSS=17mA
-2 -1.
5 -1 -0.
5 0
GATE - SOURCE VOLTAGE VGS (V)
yfs - IDSS
100 VDS=5V VGS=0V f=1kHz
FORWARD TRANSFER ADMITTANCE yfs (mS)
DRAIN CURRENT ID (mA)
ID - VGS
40
35
VDS=5V IDSS=31mA
30
25
20
15
10
5 75 C -25 C 25 C
0
-3 -2.
5 -2 -1.
5 -1
-25 C 25 C
75 C
-0.
5 0
GATE - SOURCE VOLTAGE VGS (V)
100 VDS=5V f=1kHz
10
yfs - ID
IDSS=17mA
IDSS=31mA
1 0.
1 1 10
DRAIN CURRENT ID (mA)
100
VGS(off) - IDSS
10 VDS=5V ID=100µA
1
DRAIN CURRENT ID (mA)
CUTOFF VO...
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