EPITAXIAL PLANAR PNP TRANSISTOR
Description
SEMICONDUCTOR
TECHNICAL DATA
MMBTA92/93
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES Complementary to MMBTA42/43.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
MMBTA92 MMBTA93
VCBO
-300 -200
Collector-Emitter Voltage
MMBTA92 MMBTA93
VCEO
-300 -200
Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature
VEBO IC IE PC * Tj Tstg
-5.
0 -500 500 350 150 -55 150
* : Package Mounted On 99.
5% Alumina 10 8 0.
6mm.
UNIT
V
V V mA mA mW
Q
Marking
YVType Name
C N K J
A G H
D
E L BL
23 1
PP
M
DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+0.
20/-0.
15 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 G 1.
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 P7 Q 0.
1 MAX
1.
EMITTER 2.
BASE 3.
COLLECTOR
SOT-23
Lot No.
YWType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
MMBTA92 MMBTA93
V(BR)CBO
Collector-Emitter Breakdown Voltage
MMBTA92 MMBTA93
V(BE)CEO
Collector Cut-off Current
MMBTA92 MMBTA93
ICBO
DC Current Gain
* hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
MMBTA92 MMBTA93
* VCE(sat) * VBE(sat)
fT
Cob
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.
0%
MMBTA92
TEST CONDITION
IC=-100 A, IE=0
IC=-1.
0mA, IB=0
VCB=-300, IE=0 VCB=-200, IE=0 IC=-1.
0mA, VCE=-10V IC=-10mA, VCE=-10V IC=-30mA, VCE=-10V IC=-20mA, IB=-2.
0mA IC=-20mA, IB=-2.
0mA VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, IE=0, f=1MHz
MIN.
-300 -200 -300 -200
25 40 25 50 -
MMBTA93
TYP.
-
MAX.
-
-250 -250
-0.
5 -0.
9 6.
0 8.
0
UNIT V V nA
V V MHz pF
2014.
10.
24
Revision No : 2
1/2
COLLECTOR OUTPUT CAPACITANCE C ob (pF)
MMBTA92/93
Cob - V R
100 50
C ib 30
10
5 3
1 -0.
1 -0.
3 -1
Cob -3 -10 -30 -100 -300 -1k
REVERSE VOLTAGE VR (V)
TRANSITION FREQUENCY fT (MHz)
fT - IC
100
50 30
T j =25 C
VC...
Similar Datasheet