PNP TRANSISTOR
Description
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Collector-Base Voltage Coll...
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