Dual N-Channel MOSFET
Description
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC Converter Applications.
FEATURES VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10...
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