EPITAXIAL PLANAR PNP TRANSISTOR
Description
SEMICONDUCTOR
TECHNICAL DATA
CAMERA STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES hFE=100 320 (VCE=-2V, IC=-0.
5A).
hFE=70(Min.
) (VCE=-2V, IC=-3A).
Low Collector Saturation Voltage.
: VCE(sat)=-0.
5V(Max.
) (IC=-3A, IB=-75mA).
High Power Dissipation.
: PC=1W(Tc=25 ), PC=0.
5W(Ta=25 ).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse (Note1)
Base Current
VCBO VCEO VEBO
IC ICP IB
-35 -20 -8 -3 -5 -0.
5
Collector Power Dissipation
Ta=25 Tc=25 *
PC
0.
5 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note1 : Pulse Test : Pulse width=10ms(Max.
)
Duty cycle=30%(Max.
)
*Pc : KTA1001 mounted on ceramic substrate(250mm2x0.
8t)
UNIT V V V A A A
W
J B
EK
KTA1001
EPITAXIAL PLANAR PNP TRANSISTOR
AC H
G
DD K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.
70 MAX 2.
50 +_0.
20 1.
70 MAX
0.
45+0.
15/-0.
10 4.
25 MAX 1.
50+_ 0.
10 0.
40 TYP 1.
75 MAX 0.
75 MIN
0.
5+0.
10/-0.
05
1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
SOT-89
Marking
hFE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance
ICBO
VCB=-35V, IE=0
IEBO VEB=-8V, IC=0
V(BR)CEO
IC=-10mA, IB=0
V(BR)EBO
IE=-1mA, IC=0
hFE(1) (Note2) VCE=-2V, IC=-0.
5A
hFE(2)
VCE=-2V, IC=-3A
VCE(sat)
IC=-3A, IB=-75mA
VBE VCE=-2V, IC=-3A
fT VCE=-2V, IC=-0.
5A
Cob VCB=-10V, IE=0, f=1MHz
Note2 : hFE(1) Classification 0:100 200, Y:160 320
1994.
3.
21
Revision No : 0
MIN.
-20 -8
100 70 -
TYP.
-
170 62
MAX.
-100 -100
320 -0.
5 -1.
5 -
UNIT nA nA V V
V V MHz pF
1/2
COLLECTOR CURRENT IC (A) -100mA -50mA
KTA1001
I C - VCE
-4 COMMON EMITTER
-20mA
Ta=25 C
-3
-10mA -2
-5mA -3mA
-1 -2mA
I B =-1mA 0
0
...
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