N-Channel MOSFET
Description
CYStech Electronics Corp.
Spec.
No.
: C583M3 Issued Date : 2012.
01.
12 Revised Date : 2013.
08.
11 Page No.
: 1/8
N-CHANNEL MOSFET
MTN2328M3
BVDSS ID RDSON@VGS=10V, ID=3A
RDSON@VGS=4.
5V, ID=3A
100V 3A 130mΩ(typ) 136mΩ(typ)
Description
The MTN2328M3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance • High speed switching • Low-voltage drive • Easily designed drive circuits • Pb-free lead plating package
Symbol
MTN2328M3
Outline
SOT-89
G：Gate S：Source D：Drain
GD D S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=100°C Pulsed Drain Current Total Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDSS VGSS
ID ID IDM
PD
Tj; Tstg
Limits
100 ±20
3 1.
9 12 *1 2.
1 *2 -55~+150
Note : *1.
Pulse Width ≤ 300μs, Duty cycle ≤2% *2.
When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz.
copper.
Unit V V
A A A W °C
MTN2328M3
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C583M3 Issued Date : 2012.
01.
12 Revised Date : 2013.
08.
11 Page No.
: 2/8
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient Note : Surface mounted on 1 in² copper pad of FR-4 board.
Symbol Rth,ja
Limit 60
Unit °C/W
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Static BVDSS* VGS(th) IGSS IDSS
RDS(ON)*
GFS
100 1 -
-
Dynamic
Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
1.
8 130 136 5
1188 30 17 7 3.
2 29 5 18.
4 4 7.
5
45 70
2.
5 ±100 1 150 160 -
-
3 12 1.
2 -
Unit
V V nA μA mΩ S
pF
ns
nC
A V ns nC
Test Conditions
VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=100V, VGS=0 ID=3A, VGS=10V ID=3A, VGS=4.
5V VDS=10V, ID=3A
VDS=25V, VGS=0, f=1MHz
VDS=50V, ID=3A, VGS=10V, RGEN=6Ω
VDS=50V, ID=3A, VGS=10V
VGS=0V, IS=3A IF=3A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
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