N-Channel Enhancement Mode MOSFET
Description
CYStech Electronics Corp.
Spec.
No.
: C582N3 Issued Date : 2011.
08.
30 Revised Date : Page No.
: 1/ 7
20V N-Channel Logic Level Enhancement Mode MOSFET
MTN2306ZN3
BVDSS
ID
VGS=10V, ID=5A
Features
• VDS=20V
RDS(ON)=30mΩ@VGS=4.
5V, ID=5A
RDS(ON)=40mΩ@VGS=2.
5V, ID=2.
6A
• Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating package
RDSON(MAX)
VGS=4.
5V, ID=5A VGS=2.
5V, ID=2.
6A VGS=1.
8V, ID=1A
20V 6A 28mΩ 30mΩ 40mΩ 60mΩ
Equivalent Circuit
MTN2306ZN3
Outline
SOT-23 D
G：Gate S：Source D：Drain
GS
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.
5V (Note 3) Continuous Drain Current @ TA=70°C, VGS=4.
5V (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃
Linear Derating Factor ESD susceptibility (Note 4) Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature
Note : 1.
Pulse width limited by maximum junction temperature.
2.
Pulse width≤ 300μs, duty cycle≤2%.
MTN2306ZN3
Symbol
VDS VGS ID ID IDM
PD
Rth,ja Tj, Tstg
Limits 20 ±8 6 4 24 1.
38
0.
01
2600
90 -55~+150
Unit V V A A A W
W/°C V
°C/W °C
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C582N3 Issued Date : 2011.
08.
30 Revised Date : Page No.
: 2/ 7
3.
Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.
4.
Human body model, 1.
5kΩ in series with 100pF
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static BVDSS VGS(th) GFS IGSS
IDSS
*RDS(ON)
20 -
- V VGS=0, ID=250μA
0.
4 - 1.
2 V VDS=VGS, ID=250μA
- 13 -
S VDS=5V, ID=5A
- - ±10 μA VGS=±8V, VDS=0
- - 1 μA VDS=20V, VGS=0
- - 25 μA VDS=20V, VGS=0, Tj=70°C
- 19.
5 28
VGS=10V, ID=5A
-
23 30
30 40
mΩ
VGS=4.
5V, ID=5A VGS=2.
5V, ID=2.
6A
- 45 60
VGS=1.
8V, ID=1A
Dynamic
Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd
- 474 800
- 77.
3...
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