N-Channel MOSFET Transistor
Description
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK551
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 120V(Min) ·Fast Switching Speed
APPLICATIONS ·low drive Current,high speed switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
120 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 10 A
Total Dissipation@TC=25℃
50 W
Max.
Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
isc website：www.
iscsemi.
cn
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK551
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A
IGSS Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=100V; VGS= 0
VSD Diode Forward Voltage
IF=10A; VGS=0
tr Rise time
ton Turn-on time tf Fall time
VGS=10V;ID=5A; RL=6Ω
toff Turn-off time
MIN TYP MAX UNIT 120 V
2.
0 4.
0 V
0.
15 0.
2
Ω
±10 uA
250 uA
1.
2 V
40 ns
55 ns 45 ns 115 ns
isc website：www.
iscsemi.
cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.
fineprint.
cn
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