512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Description
IS61WV51216EDALL IS61/64WV51216EDBLL
512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
JULY 2020
FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater
noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no ...
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