Fast Silicon Mesa Rectifiers
Description
BYV56 Series
Fast Silicon Mesa Rectifiers
Features
Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics
Applications
Very fast rectifiers and switches
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage =Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
Average forward current
Junction and storage temperature range
tp=10ms, half sinewave
on PC board
l=10mm, TL=25°C
Type BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M
Symbol
VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM
IFSM
Value 50 100 200 400 600 800
1000 80
IFAV IFAV Tj=Tstg
1.
5 3 –65.
.
.
+175
Unit V V V V V V V A
A A °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=10mm, TL=constant on PC board with spacing 37.
5mm
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage Reverse current
Reverse recovery time
IF=3A VR=VRRM VR=VRRM, Tj=150°C IF=0.
5A, IR=1A, iR=0.
25A
Type
Symbol
RthJA RthJA
Value 25 70
Unit K/W K/W
Symbol Min Typ Max Unit
VF 1.
4 V IR 5 mA IR 150 mA trr 100 ns
BYV56 Series
Fast Silicon Mesa Rectifiers
IR – Reverse Current ( mA )
R thJA – Therm.
Resist.
Junction / Ambient ( K/W )
Characteristics (Tj = 25_C unless otherwise specified)
40 1000
Scattering Limit 30 100
20 l l
10
TL=constant
0 0 5 10 15 20 25 30
94 9462
l – Lead Length ( mm )
Figure 1.
Max.
Thermal Resistance vs.
Lead Length
I FAV– Average Forward Current ( A )
2.
0 VR RM
vf 50kHz v1.
6 RthJA 70K/W
PC Board 1.
2
0.
8
0.
4
0 0 40
80 120 160 200
95 9683
Tamb – Ambient Temperature ( °C )
Figure 2.
Max.
Average Forward Current vs.
Ambient Temperature
4
VR = VR RM
v3 f 50kHz vRthJA 25K/W
l=10mm 2
10 VR = VR RM
1
0.
1 0 40 80 120 160 200
94 9464
Tj – Junction Temperature ( °C )
Figure 4.
Reverse Current vs.
Junction Temperature
100
Tj = 25°C 10
Scattering Limit 1
IF – Forward Current ( A )
0.
1
0.
01 0 0.
6 1.
2 1.
8 2.
4 3.
0
94 9465
VF –...
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