N-Channel Enhancement Mode Power MOSFET
Datasheet TDM2306
DESCRIPTION
The TDM2306 uses advanced trench technology to provide
excellent R , low gate charge and operation with gate
DS(ON)
voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 30mΩ @ VGS=10V
● High Power and curre...
