Low-frequency silicon NPN power transistor
Description
3DD157 NPN
PCM ICM Tjm Tstg
Rth
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VBEsat
VCEsat
hFE
TC=75℃
VCE=10V IC=1A
ICB=3mA ICE=3mA IEB=1mA VCB=50V VCE=50V VEB=4V IC=1.5A IB=0.3A VCE=5V IC=1.5A
ABCDE FG
30 3 175 -55~150
3.3
≥80 ≥150 ≥200 ≥250 ≥350 ≥400 ≥600 ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 ≥400
≥5.0 ≤0.5 ≤1.0 ≤0.5 ≤1.5 ≤1.0
15~180
W A ℃ ℃
℃/W
V V...
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