NPN Transistors
Description
SMD Type
NPN Transistors KXC1502
Transistors
■ Features
● Collector Power Dissipation: PC=0.
5W ● Collector Current: IC=1.
5A
1.
70 0.
1
0.
42 0.
1
0.
46 0.
1
1.
Base 2.
Collector 3.
Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current -Continuous
IC
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Rating 40 20 5 1.
5 0.
5 150
-55 to 150
Unit V V V A W ℃ ℃
■ Electrical Characteristics Ta = 25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Output capacitance Transition frequency
Symbol
Test conditions
V(BR)CBO IC= 100μA, IE=0
V(BR)CEO IC= 1mA, IB=0
V(BR)EBO IE= 100μA, IC=0
ICBO VCB= 40V, IE=0
IEBO VEB =5V, I C=0
VCE= 1V, IC= 100mA hFE
VCE= 1V, IC= 800mA
VCE(sat) IC= 800mA, IB= 80mA
VBE(sat) IC= 800mA, IB= 80mA
Cob VCB= 10V,IE=0,f=1MHz fT VCE= 6V, I C= 20mA ,f=30MHz
■ Marking
Marking
D882
Min Typ Max Unit 40 V 20 40 V 5V
0.
1 μA 0.
1 μA 160 320 40 0.
5 V 1.
2 V 20 pF 100 MHz
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SMD Type
Transistors
IC[A], COLLECTOR CURRENT
Typical Characteristics
NPN Transistors KXC1502
0.
5
IB = 3.
0mA
0.
4
IB = 2.
5mA 0.
3 IB = 2.
0mA
IB = 1.
5mA
0.
2
IB = 1.
0mA
0.
1
IB = 0.
5mA
0 0.
4 0.
8 1.
2 1.
6 2.
0
VCE[V], COLLECTOR-EMITTER VOLTAGE
hFE, DC CURRENT GAIN
1000 100 10 1 0.
1
VCE = 1V
1 10 100
IC[mA], COLLECTOR CURRENT
1000
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
10000 1000
VBE(sat)
IC = 10 IB
100 10 0.
1
VCE(sat)
1 10 100
IC[mA], COLLECTOR CURRENT
1000
1000 100
IE = 0 f = 1MHz
Cob [pF], CAPACITANCE
10
1 1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
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fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
100
VCE = 1V
10
1
0.
1 0.
0
0.
2 0.
4 0.
6 0.
8 1.
0
VBE[V], BASE-EMIT...
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