MOS FIELD EFFECT TRANSISTOR
Description
NP100N04NUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS ...
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