2.5V Drive Nch MOSFET
Description
2.
5V Drive Nch MOSFET
RJU003N03FRA
AEC-Q101 Qualified
zStructure Silicon N-channel MOSFET
zFeatures 1) Low On-resistance.
2) Low voltage drive (2.
5V drive).
zApplications Switching
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
RRJJUU000033NN0033FRA
Taping T106 3000
zDimensions (Unit : mm)
UMT3
2.
0 0.
3
(3)
0.
9 0.
2 0.
7
1.
25 2.
1 0.
1Min.
(1) Source (2) Gate (3) Drain
(2) (1)
0.
65 0.
65 1.
3
0.
15
Each lead has same dimensions
Abbreviated symbol : LP
zInner circuit
(3)
(2) ∗2
∗1
∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land
Symbol
VDSS VGSS
ID IDP ∗1 PD ∗2 Tch Tstg
Limits 30 ±12
±300 ±1.
2 200 150 −55 to +150
Unit V V mA A
mW °C °C
(1) Source (2) Gate (3) Drain
zThermal resistance
Parameter Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol Rth(ch-a) ∗
Limits 625
Unit °C/W
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rohm.
com ○c 2009 ROHM Co.
, Ltd.
All rights reserved.
1/4
2009.
03 - Rev.
A
RJU003N03FRA
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
−
−
V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − 1 µA VDS= 30V, VGS=0V
Gate threshold voltage
VGS (th) 0.
8 − 1.
5 V VDS= 10V, ID= 1mA
Static drain-source on-state resistance
RDS (on)∗
− − −
0.
8 1.
1 0.
9 1.
3 1.
4 1.
9
Ω ID= 300mA, VGS= 4.
5V Ω ID= 300mA, VGS= 4V Ω ID= 300mA, VGS= 2.
5V
Forward transfer admittance
Yfs ∗ 0.
4
−
−
S VDS= 10V, ID= 300mA
Input capacitance
Ciss − 24 − pF VDS= 10V
Output capacitance
Coss − 11 − pF VGS=0V
Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Crss − 5 − pF f=1MHz
td (on) ∗...
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