Nch 60V 300mA Small Signal MOSFET
Description
RHK003N06FRA
Nch 60V 300mA Small Signal MOSFET
VDSS RDS(on)(Max.
)
ID PD
60V 1.
0Ω ±300mA 200mW
lFeatures
1) Very fast switching 2) Pb-free lead plating ; RoHS compliant.
3) AEC-Q101 Qualified
lOutline
SOT-346 SC-59 SMT3
lInner circuit
Datasheet AEC-Q101 Qualified
lApplication Switching circuits
lPackaging specifications Packing
Reel size (mm)
Type Tape width (mm) Quantity (pcs)
Taping code
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Operating junction and storage temperature range
VDSS ID IDP*1
VGSS PD*2 Tj Tstg
60 ±300 ±1.
2 ±20 200 150 -55 to +150
Embossed Tape 180 8 3000 T146 RKS
Unit V mA A V mW
℃ ℃
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, Ltd.
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20221214 - Rev.
002
RHK003N06FRA lThermal resistance
Parameter Thermal resistance, junction - ambient
Datasheet
Symbol RthJA*2
Values Unit
Min.
Typ.
Max.
-
- 625 ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃
Zero gate voltage drain current
IDSS VDS = 60V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage temperature coefficient
VGS(th) ΔVGS(th)
ΔTj
VDS = 10V, ID = 1mA ID = 1mA referenced to 25℃
Static drain - source on - state resistance
RDS(on)*3 VGS = 10V, ID = 300mA VGS = 4V, ID = 300mA
Forward Transfer Admittance
|Yfs|*3 VDS = 10V, ID = 300mA
Values Unit
Min.
Typ.
Max.
60 -
-
V
- 66.
1 - mV/℃
-
-
1 μA
-
- ±10 μA
1.
0 - 2.
5 V
- -3.
0 - mV/℃
- 0.
7 1.
0 Ω
- 1.
1 1.
5
200 -
- mS
*1 Pw≦10μs , Duty cycle≦1% *2 Each terminal mounted on a reference land.
*3 Pulsed
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rohm.
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© 2022 ROHM Co.
, Ltd.
All rights reserved.
2/10
20221214 - Rev.
002
RHK...
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