P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
Advanced Power Electronics Corp.
AP10P10GK-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
D
SOT-223
S D G
Description
AP10P10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package.
BVDSS RDS(ON) ID
G
-100V 500mΩ - 1.
65A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating - 100 +20 - 1.
65 -1.
3
-6 2.
78 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 45
Unit ℃/W
1 201211021
AP10P10GK-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=-250uA
VGS=-10V, ID=-1.
5A
VGS=-4.
5V, ID=-1A
VDS=VGS, ID=-250uA VDS=-10V, ID=-1.
5A VDS=-80V, VGS=0V VGS=+20V, VDS=0V ID=-1.
5A VDS=-50V VGS=-4.
5V VDS=-50V ID=-1A RG=3.
...
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