P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
Advanced Power Electronics Corp.
AP10P10GH/J-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
D BVDSS
-100V
RDS(ON)
500mΩ
G ID -5.
7A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G D S TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP10P10GJ) is available for low-profile applications.
G D S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
-100 +30 -5.
7 -3.
6 -15 32.
5
2 -55 to 150 -55 to 150
V V A A A W W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 3.
85 62.
5 110
Units ℃/W ℃/W ℃/W
1 201501123
AP10P10GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Tim...
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