N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
Advanced Power Electronics Corp.
AP09N90W-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP09N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-3P package is widely preferred for commercial-industrial surface mount applications and suited for higher voltage applications such as SMPS.
BVDSS RDS(ON) ID
G D S
900V 1.
2Ω 8.
6A
TO-3P
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
EAS TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
Linear Derating Factor Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range
900 +30 8.
6
5 30 240 1.
92 18 -55 to 150 -55 to 150
V V A A A W W/℃ mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value 0.
52
40
Units ℃/W ℃/W
1 201501124
AP09N90W-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS RDS(ON) VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA Static Drain-Source On-Resistance3 VGS=10V, ID=4.
5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=4.
5A
Drain-Source Leakage Current
VDS=720V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=720V, VGS=0V
Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate...
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