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2N6241

Electronix

SILICON CONTROLLED RECTIFIERS

2N6236-2N6241 SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Availabl...


Electronix

2N6241

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2N6236-2N6241 SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TC = 110°C unless otherwise noted) Rating Symbol Value Unit Repetitive peak forward and reverse blocking voltage (1) (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 VDRM VRRM 30 50 100 200 400 600 Volts Non-repetitive peak reverse blocking voltage (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 VRSM 50 100 150 250 450 650 Volts Average on-state current (TC = -40 to +90°C) (TC = 100°C) IT(AV) 2.6 1.6 Amps Surge on-state current (1/2 sine wave, 60Hz, TC = 90°C) (1/2 sine wave, 1.5ms, TC = 90°C) Circuit fusing (TC = -40 to +110°C, t = 8.3ms) ITSM 25 Amps 35 I2t 2.6 A2s Peak gate power (pulse width = 10µs, TC = 90°C) PGM 0.5 Watts Average gate power (t = 8.3ms, TC = 90°C) PG(AV) 0.1 Watts Peak forward gate current IGM 0.2 Amps Peak reverse gate voltage Operating junction temperature range VRGM TJ 6 -40 to 110 Volts °C Storage temperature range Tstg -40 to 150 °C Stud torque 6 In. lb. Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or re...




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