Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANS...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER
TRANSISTORS
ECB
BD433 BD435 BD437 BD439 BD441
NPN
BD434 BD436 BD438 BD440 BD442
PNP
TO126 Plastic Package
Intended for use in Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCES
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current
IC
Collector Peak Current (t=10ms_ ICM
Base Current
IB
Total Dissipation @ TC=25ºC
PD
Total Dissipation @ Ta=25ºC Derate above 25ºC
PD
Operating and Storage Junction Temperature Range
Tj, Tstg
BD433 BD434
22 22 22
BD435 BD436
32 32 32
BD437 BD438
45 45 45 5.0 4.0 7.0 1.0
36.0 1.25 10
BD439 BD440
60
60 60
- 65 to 150
BD441 BD442
80 80 80
UNIT
V V V V A A A W W mW/ ºC
ºC
THERMAL RESISTANCE Junction to Case Junction to Ambient in free air
Rth (j-c) Rth (j-a)
3.5 100
ºC/W ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441
Collector Cut off Current Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage
BD434 BD436 BD438 BD440 BD442
ICBO VCB=Rated VCBO, IE=0 <100 <100 <100 <100 <100
ICES VBE=0, VCE=Rated VCES <100 <100 <100 <100 <100
IEBO
VEB=5V, IC=0
<1.0 <1.0 <1.0 <1.0 <1.0
*VCEO (sus)
IC=100mA, IB=0
>22 >32 >45 >60 >80
Collector Emitter Saturation Voltage
*VC...