BD137

BD135 BD137 BD139 NPN SILICON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation (Tmb≤70°C) Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL BD135 BD137 BD139 VCBO 45 60 100 VCEO 45 60 80 VEBO 5.0 IC 1.5 ICM 2.0 IB 0.5 IBM 1.0 PD 8.0 PD 1.25 TJ, Tstg -65 to +150 ΘJmb 10 ΘJA 100 UNITS V V V A A A A W W °C °C/W °C/W ELECTRICAL SYMBOL CHATREASCTTCEORNISDTITICIOSN: (ST C=25°C unless otherwise MIN noted) TYP MAX ICBO VCB=30V 100 ICBO VCB=30V, TC=125°C 10 IEBO VEB=5.0V 100 BVCEO IC=30mA (BD135) 45 BVCEO IC=30mA (BD137) 60 BVCEO IC=30mA (BD139) 80 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(ON) VCE=2.0V, IC=500mA 1.0 hFE VCE=2.0V, IC=5.0mA 40 hFE VCE=2.0V, IC=150mA 63 250 hFE VCE=2.0V, IC=500mA 25 fT VCE=5.0V, IC=50mA, f=100MHz 190 UNITS nA µA nA V V V V V MHz SYMBOL TEST CONDITIONS hFE VCE=2.0V, IC=500mA BD135-10 BD137-10 BD139-1...