Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER T...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER
TRANSISTORS
BD135 BD137 BD139
TO126 Plastic Package
ECB Designed for use as Audio Amplifier and Drivers Utilizing
Complementary BD136, BD138, BD140
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage
Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current
Collector Peak Current
Base Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Power Dissipation @ Tc=70ºC Operating And Storage Junction Temperature Range
SYMBOL VCEO VCER VCBO VEBO IC ICM IB PD
PD
PD
Tj, Tstg
BD135 45 45 45
BD137 60 60 60 5.0 1.5 2.0 0.5 1.25 10 12.5 100 8.0
- 55 to +150
THERMAL CHARACTERISTICS Junction to Ambient in free air
Junction to Case
Rth (j-a) Rth (j-c)
100 10
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Sustaining Voltage
*VCEO (sus)
IC=30mA, IB=0 BD135
BD137
BD139
Collector Cut off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Tc=125ºC
Emitter Cut off Current
IEBO
VEB=5V, IC=0
DC Current Gain
*hFE IC=0.005A, VCE=2V IC=0.15A, VCE=2V IC=0.5A, VCE=2V
*Pulse test:- Pulse width=300µs, duty cycle=2%
MIN 45 60 80
25 40 25
BD139 80 100 100
UNIT V V V V A A A W
mW/ºC W
mW/ºC W
ºC
ºC/W ºC/W
MAX UNIT
V V V 0.1 µA 10 µA 10 µA
250
Continental Device India Limited
Data Sheet
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