BCX70G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation at Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz VCE = 5 V; IC = 10 mA Noise figure at f: 1 kHz VCE = 5 V; IC: 200 mA; B = 200 Hz RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector) VCES VCE0 IC Ptot Tj max. max. max. max. max. 45 V 45 V 200 mA 250 mW 150 ° C fT typ. 250 MHz F typ. 2 dB VCES VCE0 VEB0 max. max. max. 45 V 45 V 5V Continental Device India Limited Data Sheet Page 1 of 3 BCX70G BCX70H BCX70J BCX70K Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature IC max. 200 mA lB max. 50 mA Ptot max. 250 mW Tstg –55 to +150 °C Tj max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j–a = 500 K/W CHARACTERISTICS Tamb: 25 °C unless otherwise specified Collector–emitter cut–off current VBE = 0; VCE = 45 V VBE = 0; VCE = 45 V; ...