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T850-600G

STMicroelectronics

HIGH PERFORMANCE TRIAC

T835-600G ® T850-600G HIGH PERFORMANCE TRIAC FEATURES HIGH COMMUTATION PREFORMANCES SNUBBERLESSTM TECHNOLOGY HIGH NOISE...


STMicroelectronics

T850-600G

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T835-600G ® T850-600G HIGH PERFORMANCE TRIAC FEATURES HIGH COMMUTATION PREFORMANCES SNUBBERLESSTM TECHNOLOGY HIGH NOISE IMMUNITY (dV/dt) HIGH ITSM DESCRIPTION The T835-600G and T850-600G triacs are using high performance SNUBBERLESS technology. They are intended for AC control applications using surface mount tecnology. These devices are perfectly suited where high commutation and surge performances are required. A2 A2 G A1 D2PAK ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) ITSM I2t dI/dt Tstg Tj T Parameter Repetitive peak off-state voltage Tj = 125°C RMS on-state current (360° conduction angle) Tc= 110°C Non repetitive surge peak on-state current (Tj initial = 25°C) I2t Value for fusing tp = 8.3ms tp = 10 ms tp = 10 ms Critical rate of rise of on-state current IG = 500 mA dIG /dt = 1 A/µs. Repetitive F = 50 Hz Non Repetitive Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10s Value 600 Unit V 8A 85 A 80 32 A2s 20 A/µs 100 - 40, + 150 - 40, + 125 260 °C °C May 1998 - Ed: 3A 1/5 T835-600G / T850-600G THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Parameter Junction to ambient (S = 1 cm2) Junction to case for DC Junction to case for AC 360° conduction angle (F=50Hz) GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) Value 45 2.1 1.6 Unit °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T835 T850 U...




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