STWA20N95K5

STWA20N95K5 N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH™ 5 Power MOSFET in TO-247 long leads package Datasheet - preliminary data Features 3 2 1 TO-247 long leads Figure 1. Internal schematic diagram D(2) G(1) Order codes VDSS RDS(on) max ID PW STWA20N95K5 950 V 0.330 Ω 17.5 A 250 W Worldwide best FOM (figure of merit) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. S(3) AM01476v1 Order codes STWA20N95K5 Table 1. Device summary Marking Package 20N95K5 TO-247 long leads Packaging Tube November 2013 DocID025573 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com Contents Contents STWA20N95K5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circu...