STW70N60M2

STW70N60M2 N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2 Power MOSFET in a TO-247 package Datasheet − production data Features Order codes VDS @ TJmax RDS(on) max ID STW70N60M2 650 V 0.040 Ω 68 A 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2) G(1) Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM01476v1 Order codes STW70N60M2 Table 1. Device summary Marking Package 70N60M2 TO-247 Packaging Tube September 2014 This is information on a product in full production. DocID024327 Rev 4 1/13 www.st.com 13 Contents Contents STW70N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision his...