STW70N60DM2

STW70N60DM2 N-channel 600 V, 0.037 Ω typ., 66 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STW70N60DM2 VDS 600 V RDS(on) max. 0.042 Ω ID 66 A PTOT 446 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STW70N60DM2 Table 1: Device summary Marking 70N60DM2 Package TO-247 Packing Tube December 2015 DocID026843 Rev 4 This is information on a product in full production. 1/12 www.st.com Contents Contents STW70N60DM2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ..............................................