STW65N65DM2AG

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A Power MOSFET MDmesh™ DM2 in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STW65N65DM2AG VDS 650 V RDS(on) max. 0.05 Ω ID PTOT 60 A 446 W Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STW65N65DM2AG Table 1: Device summary Marking 65N65DM2 Package TO-247 Packing Tube August 2015 DocID028164 Rev 1 This is information on a product in full production. 1/12 www.st.com Contents Contents STW65N65DM2AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ...........................................................................