STW62N65M5

STW62N65M5 Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A MDmesh™ V Power MOSFET in a TO-247 package Datasheet - production data Features 3 2 1 TO-247 Figure 1. Internal schematic diagram ' * 6 $0Y Order code STW62N65M5 VDS @ TJmax 710 V RDS(on) max 0.049 Ω ID 46 A Designed for automotive applications and AEQ-Q101 qualified Outstanding RDS(on) * area High VDS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Applications Switching applications Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Order code STW62N65M5 Table 1. Device summary Marking Package 62N65M5 TO-247 June 2013 This is information on a product in full production. DocID024837 Rev 1 Packaging Tube 1/14 www.st.com Contents Contents STW62N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . ...