STW48NM60N

STW48NM60N N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET in a TO-247 package Datasheet — production data Features Order codes STW48NM60N VDSS @ TJmax 650 V RDS(on) max < 0.07 Ω ID 44 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 Figure 1. Internal schematic diagram ' * 6 $0Y Table 1. Device summary Order code Marking STW48NM60N 48NM60N Package TO-247 Packaging Tube February 2013 This is information on a product in full production. Doc ID 18313 Rev 5 1/13 www.st.com 13 Contents Contents STW48NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....