N-CHANNEL MOSFET
STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5
N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, T...
Description
STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5
N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247
Features
Order codes
VDSS @ TJmax
RDS(on) max
ID
PW
STB21N65M5 STF21N65M5
17 A 125 W 17 A(1) 30 W
STI21N65M5 710 V < 0.179 Ω
STP21N65M5
17 A 125 W
STW21N65M5
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on) * area ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested
Application
Switching applications
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary
Order codes
Marking
STB21N65M5 STF21N65M5 STI21N65M5 STP21N65M5 STW21N65M5
21N65M5
123
I²PAK
3 2 1
TO-220
3 1
D²PAK
3 2 1
TO-247
3 2 1
TO-220FP
Figure 1. Internal schematic diagram
$
' 3
!-V
Package
D²PAK TO-220FP
I²PAK TO-220 TO-247
Packaging
Tape and reel Tube Tube Tube Tube
May 2011
Doc ID 15427 Rev 4
1/22
www.st.com
22
Contents
Contents
STB/F/I/P/W21N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
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