STB21N65M5

STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247 Features Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 1. Limited only by maximum temperature allowed ■ Worldwide best RDS(on) * area ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Application Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking STB21N65M5 STF21N65M5 STI21N65M5 STP21N65M5 STW21N65M5 21N65M5 123 I²PAK 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-247 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' 3 !-V Package D²PAK TO-220FP I²PAK TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube May 2011 Doc ID 15427 Rev 4 1/22 www.st.com 22 Contents Contents STB/F/I/P/W21N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....