STTH2R02-Y

STTH2R02-Y Datasheet Automotive 200 V, 2 A ultrafast recovery diode K A A K SMB Product status STTH2R02-Y Product summary Symbol Value IF(AV) 2A VRRM 200 V T j(max.) 175 °C VF(typ.) 0.7 V trr(typ.) 15 ns Features AEC-Q101 qualified Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature PPAP capable ECOPACK2 compliant Applications High frequency inverters Freewheeling diode Polarity protection Reverse battery protection Description This 2 A, 200 V uses ST's 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. DS6945 - Rev 3 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com STTH2R02-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IFRM Repetitive peak forward current tp = 5 μs, f = 5 kHz IF(RMS) IF(AV) Forward rms current Average forward current δ = 0.5, square wave TL = 90 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Operating junction temperature range (1) 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Value Unit 200 V 60 A 60 A 2 A 75 A -65 to +175 °C -40 to +175 °C Symbol Rt...