STTH1R02

STTH1R02 Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 1.5 A 200 V 175° C 0.7 V 15 ns Features and benefits ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature Description The STTH1R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-41, DO-15, SMA, and SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. AK A K DO-41 STTH1R02 A K DO-15 STTH1R02Q AA K SMA STTH1R02A K SMB STTH1R02U Order codes Part Number STTH1R02 STTH1R02RL STTH1R02A STTH1R02Q STTH1R02QRL STTH1R02U Marking STTH1R02 STTH1R02 R1A STTH1R02Q STTH1R02Q 1R2S March 2007 Rev 3 www.st.com 1/10 Characteristics 1 Characteristics STTH1R02 Table 1. Symbol Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Parameter Value Unit VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current IF(RMS) RMS forward current IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Maximum operating junction temperature 1. On infinite heatsink with 10 mm lead length DO-41(1) DO-15(1) tp = 5 µs, F = 5 kHz SMA / SMB DO-41 / DO-15 SMA /SMB DO-41 Tlead = 110° C DO-15 Tlead = 110° C SMA Tc = 110° C SMB Tc = 110° C tp = 10 ms Si...