STTH1R04-Y

STTH1R04-Y Automotive ultrafast recovery diode A A K SMA STTH1R04AY K SMB STTH1R04UY Table 1. Device summary Symbol Value IF(AV) VRRM Tj (max) VF (typ) trr (typ) 1A 400 V 175 °C 0.9 V 14 ns Datasheet - production data Features Negligible switching losses Low forward and reverse recovery times High junction temperature AEC-Q101 qualified ECOPACK®2 compliant component Description The STTH1R04-Y series uses ST's new 400 V planar Pt doping technology. Specially suited for switching mode base drive and transistor circuits. Packaged in surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for all automotive application. July 2013 This is information on a product in full production. DocID024449 Rev 1 1/10 www.st.com Characteristics 1 Characteristics STTH1R04-Y Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage IF(AV) Average forward current, δ = 0.5 SMA SMB Tlead = 130 °C Tlead = 140 °C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj Operating junction temperature(1) 1. On infinite heatsink with 10 mm lead length 400 1.0 30 -65 to +175 -40 to 175 V A A °C °C Symbol Rth(j-l) Table 3. Thermal parameters Parameter Junction to lead SMA SMB Value 30 25 Unit °C/W Symbol Table 4. Static electrical characteristics Parame...