STL73D

STL73D High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode Application ■ Electronic ballast for fluorescent lighting Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is designed for use in compact fluorescent lamps. TO-92 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking (1) Package Packaging STL73D STL73D-AP L73DL L73DH L73DL L73DH TO-92 TO-92 Bag Ammopack 1. The product is classified in DC current gain group L and group H, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. November 2009 Doc ID 15147 Rev 2 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.5 A, tP < 10 µs) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3...