Document
PROTECTION PRODUCTS - RailClamp®
Description
RailClamp® TVS diodes are specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (cable discharge events), and EFT (electrical fast transients). The RClamp2431TQ has a typical capacitance of only 0.35pF. This allows it to be used on Wi-Fi, RFID, and other circuits operating in excess of 3GHz without signal attenuation. It may be used to meet the ESD immunity requirements of IEC 61000-4-2. The RClamp2431TQ is in a 2-pin SLP1006P2T package measuring 1.0 x 0.6 x 0.4mm. The leads are spaced at a pitch of 0.65mm and feature a lead-free finish. Each device will protect one high-speed line operating up to 24 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. The combination of small size, low capacitance, and high ESD surge capability makes it ideal for use in portable equipment such as cellular phones and netbooks. The RClamp2431TQ is qualified to AEC-Q100 Grade1 for use in Automotive environments.
RClamp2431TQ
Ultra-Low Capacitance 1-Line ESD protection
Features
Transient protection for data lines to
IEC 61000-4-2 (ESD) IEC 61000-4-4 (EFT)
Ultra-small package (1.0 x 0.6 x 0.4mm) Protects one data line or one I/O pair Low capacitance: 0.35pF (Typical) Low clamping voltage 24V operating voltage Solid-state silicon-avalanche technology Qualified to AEC-Q100 Grade1 for Automotive
Mechanical Characteristics
SLP1006P2T package Molding compound flammability rating: UL 94V-0 Marking: Marking code Packaging : Tape and Reel Lead Finish: NiPdAu Pb-Free, Halogen Free, RoHS/WEEE Compliant
Applications
Automobile Antenna CAN Bus Ports Cellular Handsets & Accessories Wi-Fi Interfaces FeliCa / RFID Firewire Serial ATA
Package Dimensions
Schematic & Pin Configuration
1.0 0.60
0.65 0.40
Maximum Dimensions (mm)
SLP1006P2T (Bottom View)
Revision 11/18/2011
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RClamp2431TQ
PROTECTION PRODUCTS
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Rating
Peak Pulse Power (tp = 8/20µs)
Peak Pulse Current (tp = 8/20µs)
ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact)
Operating Temperature
Storage Temperature
Symbol Ppk IPP
VESD
TJ TSTG
Value
100 2
+/- 13 +/- 8 -40 to +125 -55 to +150
Electrical Characteristics (T=25OC unless otherwise specified)
Units Watts
A
kV
°C °C
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage Clamping Voltage
Junction Capacitance
Symbol VRWM VBR
IR
VC VC
Cj
Conditions
Minimum
It = 1mA VRWM = 24V IPP = 1A, tp = 8/20µs IPP = 2A, tp = 8/20µs VR = 0V, f = 1MHz
T=25°C T=125°C
T=25°C T=125°C
26.7
Typical 5
0.35
Maximum Units 24 V 36 V 50 nA 500 45 V 50 V 0.5 pF 1.0
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RClamp2431TQ
PROTECTION PRODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
1
Peak Pulse Power - PPP (kW)
0.1
0.01 0.1
1 10 100 Pulse Duration - tp (µs)
1000
Typical Clamping Voltage vs. Peak Pulse Current
60
40
% Rated Power or IPP (%)
Power Derating Curve
120
100
80
60
40
20
0 0 25 50 75 100 125 Ambient Temperature TA (OC)
Typical Capacitance vs. Reverse Voltage
150
0.5 TA=25OC f = 1 MHz
0.4
0.3
Capacitance - Cj (pF)
Clamping Voltage -VC (V)
0.2 20
0 0.5
TA=25OC Waveform Parameters: tr = 8us; td = 20us;
1.0 1.5 2.0 Peak Pulse Current - IPP (A)
2.5
0.1
0 0
5 10 15 Reverse Voltage - VR (V)
20
25
ESD Clamping (8kV Contact per IEC 61000-4-2)
Insertion Loss S21
CH1 S21 LOG 6 dB / REF 0 dB
200
TA = 25OC.
1: -0.03500 dB 800 MHz
Waveform 1ns/60ns; 8kV peak.
Corrected for 40dB attenuation.
150
Measured with 50 40dB attenuator;
0 dB
50 Scope Input Impedance.
-6 dB
2: -0.02690 dB
5
900 MHz
12 3 4
3: -0.15840 dB 1.8 GHz
-12 dB
100
-18 dB
4: -0.59350 dB 2.5 GHz
Clamping Voltage (V)
-24 dB
50 -30 dB
0 0 20 40 60 Time (ns)
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-36 dB
-42 dB
80 100
-48 dB
1 MHz
10 MHz
100 MHz
13 GHz GHz
START. 030 MHz
STOP 3000.000000 MHz
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RClamp2431TQ
PROTECTION PRODUCTS Typical Characteristics
Typical Junction Capacitance v Temperature
1.2 VR = 0
0.9
Capacitance (pF)
0.6
0.3
0.0 -50
0 50 100 Temperature (OC)
150
Breakdown Voltage (VBR) (V)
Typical Breakdown Voltage v Temperature
36 IBR = 1mA
34
32
30
28
26 -50
0 50 100 Temperature (OC)
150
Leakage Current (nA)
Typical Reverse Leakage Current v Temperature
5 VR = 24V
4
3
2
1
0 -50
0 50 100 Temperature (OC)
150
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PROTECTION PRODUCTS
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Device Connection Options
These low capacitance TVS diodes are designed to provide common mode protection for one high-speed line or differential protection for one line pair. The device is bidirectional and may be used on lines where the signal polarity is positive and ne.