CGHV96050F1

CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96050F1 Package Type: 440210 Typical Performance Over 7.9 - 8.4 GHz (TC = 25˚C) Parameter Linear Gain Output Power Power Gain Power Added Efficiency 7.9 GHz 17.0 22.4 15.6 30 8.0 GHz 16.7 28.2 15.0 37 8.1 GHz 16.4 28.2 15.1 37 8.2 GHz 15.9 31.6 14.5 39 8.3 GHz 15.2 31.6 14.0 38 8.4 GHz 14.6 31.6 13.2 37 Units dB W dB % Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2 Features 7.9 - 8.4 GHz Operation 80 W POUT typical >13 dB Power Gain 33% Typical PAE 50 Ohm Internally Matched <0.1 dB Power Droop Applications Satellite Communication Terrestrial Broadband Large Signal Models Available for ADS and MWO Rev 2.2 - May 2020 4600 Silicon Drive | Durham, NC 27703...