Applications
Defense & Aerospace Broadband Wireless
TGF2023-2-02
12 Watt Discrete Power GaN on SiC HEMT
Product Features
Frequency Range: DC - 18 GHz 40.1 dBm Nominal PSAT at 3 GHz 73.3% Maximum PAE 21 dB Nominal Power Gain at 3 GHz Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA Technology: TQGaN25 on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mm
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