Product Datasheet
August 7, 2007
DC - 12 GHz Discrete power pHEMT
TGF2021-08
Key Features and Performance
• Frequency...
Product Datasheet
August 7, 2007
DC - 12 GHz Discrete power pHEMT
TGF2021-08
Key Features and Performance
Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 8mm x 0.35μm Power pHEMT Nominal Bias Vd = 8-12V, Idq = 600-1000mA
(Under RF Drive, Id rises from 600mA to 1920mA) Chip Dimensions: 0.57 x 2.42 x 0.10 mm
(0.022 x 0.095 x 0.004 in)
Product Description
The TriQuint TGF2021-08 is a discrete 8mm pHEMT which operates from DC-12 GHz. The TGF2021-08 is designed using TriQuint’s proven standard 0.35um power pHEMT production process.
The TGF2021-08 typically provides > 39 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-08 appropriate for high efficiency applications.
The TGF2021-08 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.
The TGF2021-08 has a protective surface passivation layer providing environmental robustness.
Lead-free and RoHS compliant
Maximum Gain (dB)
Primary Applications
Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications
35
30
25 MSG
20
15 MAG
10
5
0 0 2 4 6 8 10 12 14 16 Frequency (GHz)
TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504
[email protected] www.triquint.com Rev -
1
TABLE I MAXIMUM RATINGS
Symbol
V+ VI+ | IG | PIN PD TCH TM TSTG
Parameter 1/
Positive...
