CQY36N
Vishay Telefunken
GaAs Infrared Emitting Diode in Miniature (T–¾) Package
Description
CQY36N is a standard GaAs ...
CQY36N
Vishay Telefunken
GaAs Infrared Emitting Diode in Miniature (T–¾) Package
Description
CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics. The diode is case compatible to the BPW16N photo
transistor, allowing the user to assemble his own optical interrupters.
Features
D D D D D
Suitable for pulse operation Standard T–¾ flat miniature package Wide angle of half intensity ϕ = ± 55° Peak wavelength lp = 950 nm Good spectral matching to Si photodetectors
94 8638
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFSM PV Tj Tstg Tsd RthJA Value 5 100 2 170 100 –25...+100 245 450 Unit V mA A mW °C °C °C K/W
tp
x 100 ms
t
x3s
Document Number 81001 Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600 1 (5)
CQY36N
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise time Fall Time Test Conditions IF = 50 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA
x...