XBS013S1CR-G

XBS013S1CR-G Schottky Barrier Diode, 100mA, 30V Type FEATURES Ultra Small Package APPLICATIONS Low Current Rectification ETR1619-004 ABSOLUTE MAXIMUM RATINGS PARMETER SYMBOL RATINGS Ta=25 UNITS Repetitive Peak Voltage VRM 30 Reverse Voltage (DC) VR 30 Forward Current (Average) Peak Forward Surge Current *1 IF(AV) IFSM 100 0.6 Junction Temperature Tj 125 Storage Temperature Range Tstg -55 +125 *1) 60Hz Half sine wave, 1 cycle, Non-Repetitive. V V mA A PACKAGING INFORMATION MARKING RULE 3(Product Number) a,b,c,d,e,d,e,f,g,h Lot Number PRODUCT NAME PRODUCT NAME XBS013S1CR-G* PACKAGE USP-2B02 * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket. ELECTRICAL CHARACTERISTICS PARAMETER Forward Voltage Reverse Current SYMBOL VF1 IR TEST CONDITIONS IF=100mA VR=25V MIN. - LIMITS TYP. 0.71 - Ta=25 MAX. 1 2 UNITS V A ●NOTES ON USE 1. Please keep away from mechanical stress to the product when mounting or after mounting. 2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board deformation and mechanical stress. 1/3 XBS013S1CR-G TYPICAL PERFORMANCE CHARACTERISTICS (1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage 100 1000 Forward Current　IF (mA) Ta=125℃ 10 75℃ 1 -25℃ 25℃ Reverse Current　IR (uA) 100 Ta=125℃ 10...