VS-MBRB1635PbF

VS-MBRB1635PbF, VS-MBRB1645PbF Vishay Semiconductors Schottky Rectifier, 16 A Base cathode 2 D2PAK 1 N/C 3 Anode PRODUCT SUMMARY IF(AV) VR IRM 16 A 35 V/45 V 40 mA at 125 °C MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM IFSM tp = 5 μs sine VF 16 Apk, TJ = 125 °C TJ FEATURES 150 °C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified DESCRIPTION This VS-MBRB16... Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. VALUES 16 35/45 1800 0.57 - 65 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBRB1635PbF VS-MBRB1645PbF 35 45 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Non-repetitive peak surge current IFSM Non-repetitive avalanche energy Repetitive avalanche current EAS IA...