ADVANCED INNEFWORPRMOATDIUOCNT
Product Summary
V(BR)DSS 30V
RDS(ON) 25mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V
ID TA = +25°C
6.2A
5.8A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications...
