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RB501V-40

RECTRON

Plastic-Encapsulate Schottky Barrier Diode

RB501V-40 SOD-323 Plastic-Encapsulate Schottky Barrier Diode Features High Current Capability Low Forward Voltage Drop...


RECTRON

RB501V-40

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Description
RB501V-40 SOD-323 Plastic-Encapsulate Schottky Barrier Diode Features High Current Capability Low Forward Voltage Drop SOD-323 Mechanical Data SOD-323 Small Outline Plastic Package Polarity: Color band denotes cathode end Mounting Position: Any Marking: 4 Maximum Ratings & Thermal Characteristics (Ratings at 25ć ambient temperature unless otherwise specified.) Parameters Symbol Limit Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current Io 0.1 A Peak forward surge current 8.3 ms single half sine-wave IFSM 1.0 A Typical thermal resistance RθJA 500 ć/W Power Dissipation PD 200 P: Storage temperature range TSTG -40-+125 ć Electrical Characteristics (Ratings at 25ć ambient temperature unless otherwise specified). Parameters Maximum forward voltage Maximum reverse current Symbol VF IR Test conditions IF = 100mA IF = 10mA VR=10V Min. Typ. Max. Unit 0.55 0.34 V 30 uA Capacitance between terminals CT VR=10V, f=1MHz 6 pF 2022-05/114 REV: O RATING AND CHARACTERISTICS CURVES ( RB501V-40 ) FORWARD CURRENT I (mA) F )RUZ DUG&KDUDFWHULVWLFV 150 100 Ta=100ć 50 Ta=25ć 10 0 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE V (V) F &DSDFLWDQFH&KDUDFWHULVWLFV 12 Ta=25ć f=1MHz 9 6 3 0 0 5 10 15 20 REVERSE VOLTAGE V (V) R POWER DISSIPATION P (mW) D REVERSE CURRENT I (uA) R 5 HYHUVH&KDUDFWHULVWLFV 50 40 30 20 10 1 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE V (V) R 3RZHU'HUDWLQJ...




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