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RB521S-30

LGE

Schottky barrier Diode

FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability RB521S-30 Schot...


LGE

RB521S-30

File Download Download RB521S-30 Datasheet


Description
FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability RB521S-30 Schottky barrier Diode SOD-523 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol DC reverse voltage VR Mean rectifying current IO Peak forward surge current IFSM Power dissipation Thermal Resistance Junction to Ambient 3' 5ș-$ Junction temperature Tj Storage temperature Tstg Limit 30 200 1 150 667 125 -55~+150 Unit V mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Symbol VF IR Min Typ Max Unit 0.5 V 30 μA Conditions IF=200mA VR=10V http://www.luguang.cn Email:[email protected] FORWARD CURRENT IF (mA) RB521S-30 Forward Characteristics 1000 100 oC 10 =100 T a oC =25 1 T a 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE VF (mV) 600 REVERSE CURRENT IR (uA) Reverse Characteristics 1000 100 Ta=100 oC 10 Ta=25 oC 1 0.1 0 5 10 15 20 25 REVERSE VOLTAGE VR (V) 30 100 30 10 3 1 0 Capacitance Characteristics Ta=25℃ f=1MHz 5 10 15 REVERSE VOLTAGE VR (V) 20 POWER DISSIPATION PD (mW) 120 100 80 60 40 20 0 0 Power Derating Curve 25 50 75 100 AMBIENT TEMPERATURE Ta (℃) 125 CAPACITANCE BETWEEN TERMINALS CT (pF) http://www.luguang.cn Email:[email protected] ...




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